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Design of a Low Voltage Class-AB CMOS Super Buffer Amplifier with Sub Threshold and Leakage Control

机译:具有sub的低压aB类CmOs超缓冲放大器的设计   阈值和泄漏控制

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摘要

This paper describes a CMOS analogy voltage supper buffer designed to haveextremely low static current Consumption as well as high current drivecapability. A new technique is used to reduce the leakage power of class-ABCMOS buffer circuits without affecting dynamic power dissipation. The name ofapplied technique is TRANSISTOR GATING TECHNIQUE, which gives the high speedbuffer with the reduced low power dissipation (1.105%), low leakage and reducedarea (3.08%) also. The proposed buffer is simulated at 45nm CMOS technology andthe circuit is operated at 3.3V supply[11]. Consumption is comparable to theswitching component. Reports indicate that 40% or even higher percentage of thetotal power consumption is due to the leakage of transistors. This percentagewill increase with technology scaling unless effective techniques areintroduced to bring leakage under control. This article focuses on circuitoptimization and Design automation techniques to accomplish this goal [9].
机译:本文介绍了一种CMOS类比电压超载缓冲器,其设计具有极低的静态电流消耗和高电流驱动能力。一种新技术被用来降低ABCMOS类缓冲电路的泄漏功率,而不影响动态功耗。应用技术的名称是晶体管门控技术,它使高速缓冲器具有降低的低功耗(1.105%),低泄漏和减小的面积(3.08%)。所建议的缓冲器是在45nm CMOS技术上模拟的,电路工作在3.3V电源下[11]。消耗与开关组件相当。报告表明,总功耗的40%甚至更高百分比是由于晶体管泄漏引起的。除非引入有效的技术来控制泄漏,否则该百分比将随着技术规模的增加而增加。本文着重于实现该目标的电路优化和设计自动化技术[9]。

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  • 作者

    Gupta, Rakesh;

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  • 年度 2014
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